## Abstract In this article, we demonstrate a miniaturized high‐linearity (IIP3 = 8 dBm at 4 GHz) 3–5‐GHz ultrawideband low‐noise amplifier (LNA) implemented in a standard 0.18‐μm CMOS technology. The inductive‐series peaking technique was used to enhance the gain and bandwidth performances of the
1.9-GHz low noise amplifier using high-linearity and low-noise composite-channel HEMTs
✍ Scribed by Zhiqun Cheng; Yong Cai; Jie Liu; Yugang Zhou; Kei May Lau; Kevin J. Chen
- Publisher
- John Wiley and Sons
- Year
- 2007
- Tongue
- English
- Weight
- 535 KB
- Volume
- 49
- Category
- Article
- ISSN
- 0895-2477
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✦ Synopsis
supply voltage, the broadband LNA exhibit a gain of 12.4 -12.7/ 17.3-18.6 dB, noise figure of Ͻ5.5/4.9 dB, input return loss better than 15.7/12.8 dB, isolation better than 30/30 dB, IIP3 of Ϫ10.5/ Ϫ10 dBm and input P 1dB of Ϫ19.5/Ϫ18.5 dBm, respectively. Compared with previously reported UWB CMOS LNAs, our LNA (at 1 V) with a much lower power consumption has an about 3-4 dB more gain and a little better (or approximately equal) noise figure performances at 3-6 GHz range. The noncascode type LNA in this paper shows a potential for low-voltage design applications.
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