✦ LIBER ✦

A 3–10 GHz CMOS low-noise amplifier using wire bond inductors

✍ Scribed by Miyoung Yang; Mincheol Ha; Youngjin Park; Yunseong Eo

Publisher: John Wiley and Sons
Year: 2009
Tongue: English
Weight: 338 KB
Volume: 51
Category: Article
ISSN: 0895-2477
DOI: 10.1002/mop.24082

No coin nor oath required. For personal study only.

✦ Synopsis

Abstract

In this article, a small‐sized 3–10 GHz CMOS LNA for ultra‐wideband (UWB) applications is presented. To reduce 2 on‐chip inductors, wire bond inductors are used instead of input inductor of multisectional reactive network and source degeneration inductor. The noise figure of low‐noise amplifier (LNA) is 4 dB at minimum and IIP3 + 1.1 dBm at 5 GHz, respectively. The current consumption is 4 mA at 1.8 V supply. The LNA chip size including pads is 1 mm × 1 mm. © 2008 Wiley Periodicals, Inc. Microwave Opt Technol Lett 51: 414–416, 2009; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24082

📜 SIMILAR VOLUMES

A 30-GHz 10-dB low noise amplifier using

A 30-GHz 10-dB low noise amplifier using standard 0.18-μm CMOS technology

✍ Hsin-Lung Tu; Tsung-Yu Yang; Kung-Hao Liang; Hwann-Kaeo Chiou 📂 Article 📅 2007 🏛 John Wiley and Sons 🌐 English ⚖ 192 KB

## Abstract A three‐stage 30‐GHz low noise amplifier (LNA) was designed and fabricated in a standard 0.18‐μm CMOS technology. The LNA has demonstrated a 10‐dB gain and a minimum noise figure of 5.2 dB at 30 GHz. The achieved input 1‐dB compression point (IP~1 dB~) and third order intercept point (I

Design of a 9 GHz CMOS low noise amplifi

Design of a 9 GHz CMOS low noise amplifier using gain-enhanced technique

✍ Sen Wang 📂 Article 📅 2011 🏛 John Wiley and Sons 🌐 English ⚖ 405 KB

## Abstract In this article, a 9 GHz low noise amplifier (LNA) using gain‐enhanced technique is presented. The compact and high‐gain LNA with cascode topology is implemented in a standard 0.18‐μm CMOS process. The gain‐enhanced technique consists of two inductors in the common gate (CG) stage of th

1.8-V 3.1–10.6-GHz CMOS low-noise amplif

1.8-V 3.1–10.6-GHz CMOS low-noise amplifier for ultra-wideband applications

✍ Yang Lu; Kiat Seng Yeo; Jian Guo Ma; Manh Anh Do; Zhenghao Lu 📂 Article 📅 2004 🏛 John Wiley and Sons 🌐 English ⚖ 141 KB

## Abstract A novel CMOS low‐noise amplifier (LNA) for 3.1–10.6‐GHz ultra‐wideband (UWB) applications is presented in this paper. As opposed to most of the previously reported UWB LNAs, which are based on SiGe technology, the proposed UWB LNA is designed based on chartered semiconductor manufacturi

A 0.6 V low-power 3.5-GHz CMOS low noise

A 0.6 V low-power 3.5-GHz CMOS low noise amplifier for WIMAX applications

✍ Jeng-Han Tsai; Yi-Jhang Lin; Hao-Chun Yu 📂 Article 📅 2011 🏛 John Wiley and Sons 🌐 English ⚖ 484 KB

## Abstract In this letter, a low‐voltage and low‐power 3.5‐GHz low noise amplifier (LNA) is designed and fabricated using TSMC 0.18‐μm MS/RF complementary metal‐oxide‐semiconductor field effect transistor (CMOS) technology. The complementary current‐reused topology is utilized to achieve low dc po

Bridged-shunt-series peaking technique f

Bridged-shunt-series peaking technique for a 3.1 10.6 GHz ultra-wideband CMOS low noise amplifier

✍ Yu-Liang Lin; Hsien-Yuan Liao; Hwann-Kaeo Chiou 📂 Article 📅 2008 🏛 John Wiley and Sons 🌐 English ⚖ 478 KB

## Abstract An ultra‐wideband 3.1–10.6‐GHz low noise amplifier (LNA) adopting inductive peaking technique for bandwidth extension is presented. Fabricated in a 0.18‐μm CMOS process, the proposed circuit can both satisfy the maximum bandwidth and the maximally flat response. The feedback resistor pr

A 2.4 GHz highly linear image-rejection

A 2.4 GHz highly linear image-rejection low noise amplifier by using an active inductor

✍ Jain-Yi Li; Chin-Sheng Chang; Wen-Jeng Lin; Han-Jan Chen; Lih-Shan Chen; Mau-Pho 📂 Article 📅 2009 🏛 John Wiley and Sons 🌐 English ⚖ 315 KB

## Abstract This article presented a highly linear image‐rejection (IR) low‐noise amplifier (LNA) for 2.4 GHz band applications based on 0.18 μm CMOS technology. By using folded PMOS for sinking the third‐order intermodulation distortion (IMD3), the IR LNA has high input third‐order intercept point