## Abstract A novel CMOS low‐noise amplifier (LNA) for 3.1–10.6‐GHz ultra‐wideband (UWB) applications is presented in this paper. As opposed to most of the previously reported UWB LNAs, which are based on SiGe technology, the proposed UWB LNA is designed based on chartered semiconductor manufacturi
Bridged-shunt-series peaking technique for a 3.1 10.6 GHz ultra-wideband CMOS low noise amplifier
✍ Scribed by Yu-Liang Lin; Hsien-Yuan Liao; Hwann-Kaeo Chiou
- Publisher
- John Wiley and Sons
- Year
- 2008
- Tongue
- English
- Weight
- 478 KB
- Volume
- 50
- Category
- Article
- ISSN
- 0895-2477
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✦ Synopsis
Abstract
An ultra‐wideband 3.1–10.6‐GHz low noise amplifier (LNA) adopting inductive peaking technique for bandwidth extension is presented. Fabricated in a 0.18‐μm CMOS process, the proposed circuit can both satisfy the maximum bandwidth and the maximally flat response. The feedback resistor provides good input match while contributing a small amount in noise figure degradation. The presented LNA achieves a maximum power gain of 14.1 dB within a 3‐dB bandwidth from 2.2 to 11 GHz and a good noise figure from 3.4 to 4.5 dB in the entire UWB band, and an IIP3 better than −3 dBm while drawing 30 mW from a 1.5‐V supply. © 2008 Wiley Periodicals, Inc. Microwave Opt Technol Lett 50: 575–578, 2008; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.23166
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