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A low noise 3.1 10.6 GHz pMOS distributed amplifier for ultra-wideband applications

✍ Scribed by Chien-Cheng Wei; Hsien-Chin Chiu; Wu-Shiung Feng

Publisher
John Wiley and Sons
Year
2007
Tongue
English
Weight
249 KB
Volume
49
Category
Article
ISSN
0895-2477

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✦ Synopsis

Abstract

A low noise pMOS distributed amplifier for Ultra‐wideband (UWB) application is presented in this study. The amplifier is a two‐stage design fabricated in a standard 0.18‐μm CMOS process. The pMOS‐based distributed amplifier as input stage is used to achieve a better noise figure and a wider bandwidth; besides, the nMOS common‐source amplifier as output stage is applied to obtain sufficient gain over the band, respectively. The fully amplifier exhibits a power gain of 9 dB with a gain flatness of 0.8 dB, and noise figures are approximately lower than 5.3 dB from 3.1 to 10.6 GHz. The 1‐dB compression point and input third‐order intercept points are −8 dBm and 3.5 dBm with total power consumption of 22.5 mW, respectively. Experimental results indicate that the proposed architecture exhibits low noise and high gain performance for UWB applications. © 2007 Wiley Periodicals, Inc. Microwave Opt Technol Lett 49: 1641–1644, 2007; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.22532

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