## Abstract A low noise pMOS distributed amplifier for Ultra‐wideband (UWB) application is presented in this study. The amplifier is a two‐stage design fabricated in a standard 0.18‐μm CMOS process. The pMOS‐based distributed amplifier as input stage is used to achieve a better noise figure and a w
Alternative approach to low-noise amplifier design for ultra-wideband applications
✍ Scribed by Qiang Li; Y. P. Zhang
- Publisher
- John Wiley and Sons
- Year
- 2007
- Tongue
- English
- Weight
- 388 KB
- Volume
- 17
- Category
- Article
- ISSN
- 1096-4290
No coin nor oath required. For personal study only.
✦ Synopsis
Conventional ultra-wideband low-noise amplifiers require a flat gain over the entire 3.1-10.6 GHz bandwidth, which severely restraints the trade-off spaces in low noise amplifier design. This article proposes a relaxed gain-flatness requirement based on system level investigations. Considering the wireless transceiver front-end with antenna and propagation channel, the unflat-gain low-noise amplifier with an incremental gain characteristic does not degrade the performance of overall system. As an alternative to its flat-gain counterpart, the proposed unflat gain requirement tolerates gain ripple as large as 10 dB, which greatly eases the design challenges to low-noise amplifier for ultra-wideband wireless receivers. Two low-noise amplifier examples are given to demonstrate the feasibility and design flexibility under the proposed gain-flatness requirement. V
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