## Abstract A low noise pMOS distributed amplifier for Ultra‐wideband (UWB) application is presented in this study. The amplifier is a two‐stage design fabricated in a standard 0.18‐μm CMOS process. The pMOS‐based distributed amplifier as input stage is used to achieve a better noise figure and a w
A 3.5-GHz low-noise amplifier for first-generation ultra-wideband radio
✍ Scribed by Li Yang; Huailin Liao; Guoyan Zhang; Ru Huang; Xing Zhang
- Publisher
- John Wiley and Sons
- Year
- 2006
- Tongue
- English
- Weight
- 155 KB
- Volume
- 48
- Category
- Article
- ISSN
- 0895-2477
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✦ Synopsis
Abstract
We present a fully integrated low‐frequency (3.1–5‐GHz) ultra‐wideband (UWB) low‐noise amplifier (LNA) which implemented with a Jazz 0.35‐μm SiGe BiCMOS (peak f~T~ 60 GHz) process. The combination of common base and resistive shunt‐feedback stages was adopted as the main structure of the designed LNA. The measured maximum gain is 15.7 dB at 3.5 GHz with 0.6‐dB gain flatness over the whole operating bandwidth. And the minimum NF 3.8 dB is achieved at 4 GHz. The whole circuit including the bias circuit network consumes 7 mA with 3‐V supply and only occupies 0.65 × 0.9 mm. © 2006 Wiley Periodicals, Inc. Microwave Opt Technol Lett 48: 1119–1123, 2006; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.21554
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