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A series peaked gm-boosted 3.1–10.6 GHz CMOS CG UWB LNA for WiMedia

✍ Scribed by Muhammad Khurram; S. M. Rezaul Hasan


Publisher
John Wiley and Sons
Year
2011
Tongue
English
Weight
305 KB
Volume
54
Category
Article
ISSN
0895-2477

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✦ Synopsis


Abstract

An improved low noise amplifier (LNA) architecture is presented for WiMedia ultrawideband radio frequency frontend.The LNA topology addresses the issue of noise reduction keeping the power consumption to a minimum by employing the transconductance “g~m~” boosted common gate (CG) LNA topology with series peaking, operating in the WiMedia spectrum. This CG LNA utilizes an active g~m~‐boosting stage where the bias current is shared between the g~m~‐boosting stage and the self‐biased CG amplifying stage. In conjunction with an LC T‐network to further reduce the noise figure (NF) of the CG stage with finite output conductance (g~ds~), inductive series peaking is used to widen the operating pass‐band. The proposed LNA is designed using the 130 nm IBM CMOS process and achieved an input return loss (S~11~) and an output return loss (S~22~) of −10 dB and −14 dB, respectively. The LNA exhibits forward power gain (S~21~) of around 14 dB with a NF ranging between 3.5 and 4.1 dB. The complete chip dissipates 5 mW from a 1.0 V supply with an input referred third order intercept point (IIP3) and an input referred 1‐dB compression point (ICP~1dB~) of −4.8 dBm and −12.1 dBm, respectively. © 2011 Wiley Periodicals, Inc. Microwave Opt Technol Lett 54:532–535, 2012; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.26573


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## Abstract An ultra‐wideband 3.1–10.6‐GHz low noise amplifier (LNA) adopting inductive peaking technique for bandwidth extension is presented. Fabricated in a 0.18‐μm CMOS process, the proposed circuit can both satisfy the maximum bandwidth and the maximally flat response. The feedback resistor pr