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0.2-$\mu{\rm m}$ AlGaN/GaN High Electron-Mobility Transistors With Atomic Layer Deposition ${\rm Al}_{2}{\rm O}_{3}$ Passivation

✍ Scribed by Xu, Dong; Chu, Kanin; Diaz, Jose; Zhu, Wenhua; Roy, Richard; Pleasant, Louis Mt.; Nichols, Kirby; Chao, Pane-Chane; Xu, Min; Ye, Peide D.

Book ID: 120607539
Publisher: IEEE
Year: 2013
Tongue: English
Weight: 321 KB
Volume: 34
Category: Article
ISSN: 0741-3106
DOI: 10.1109/LED.2013.2255257

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