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Improved Device Performance by Post-Oxide Annealing in Atomic-Layer-Deposited Al$_{2}$O$_{3}$/AlGaN/GaN Metal–Insulator–Semiconductor High Electron Mobility Transistor on Si

✍ Scribed by Zhou, Hong; Ng, Geok Ing; Liu, Zhi Hong; Arulkumaran, Subramaniam

No coin nor oath required. For personal study only.

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