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[IEEE 2012 Lester Eastman Conference on High Performance Devices (LEC) - Providence, RI, USA (2012.08.7-2012.08.9)] 2012 Lester Eastman Conference on High Performance Devices (LEC) - Performance enhancement of GaN high electron-mobility transistors with atomic layer deposition Al2O3 passivation

✍ Scribed by Xu, Dong; Chu, Kanin; Diaz, J.; Zhu, Wenhua; Roy, R.; Seekell, P.; Pleasant, L. Mt.; Isaak, R.; Yang, Xiaoping; Nichols, K.; Pritchard, D.; Duh, G.; Chao, P. C.; Xu, Min; Ye, Peide

Book ID: 125509451
Publisher: IEEE
Year: 2012
Weight: 408 KB
Category: Article
ISBN: 1467323004
DOI: 10.1109/lec.2012.6411000

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