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[IEEE 2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Kanazawa (2013.5.26-2013.5.30)] 2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - High breakdown voltage AlGaN/GaN MOS-HEMTs-on-Si with atomic-layer-deposited Al2O3 gate insulator

✍ Scribed by Young-Shil Kim, ; Min-Woo Ha, ; Ogyun Seok, ; Woo Jin Ahn, ; Min-Koo Han,

Book ID: 124150264
Publisher: IEEE
Year: 2013
Weight: 1020 KB
Category: Article
ISBN: 1467351369
DOI: 10.1109/ISPSD.2013.6694482

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