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[IEEE 2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Kanazawa (2013.5.26-2013.5.30)] 2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - New source-side breakdown mechanism in AlGaN/GaN insulated-gate HEMTs

✍ Scribed by Bahl, Sandeep R.; Van Hove, Marleen; Xuanwu Kang, ; Marcon, Denis; Zahid, Mohammed; Decoutere, Stefaan

Book ID: 125473617
Publisher: IEEE
Year: 2013
Weight: 1015 KB
Category: Article
ISBN: 1467351369
DOI: 10.1109/ispsd.2013.6694434

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