✦ LIBER ✦
Enhanced Breakdown Voltage With High Johnson's Figure-of-Merit in 0.3-$\mu{\rm m}$ T-gate AlGaN/GaN HEMTs on Silicon by $({\rm NH}_{4})_{2}{\rm S}_{x}$ Treatment
✍ Scribed by Arulkumaran, S.; Ng, G. I.; Vicknesh, S.
- Book ID
- 121877210
- Publisher
- IEEE
- Year
- 2013
- Tongue
- English
- Weight
- 902 KB
- Volume
- 34
- Category
- Article
- ISSN
- 0741-3106
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