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XRD-Studies of SiC/Si layers on carbon substrates

✍ Scribed by Treffer, Gerd ;Neuh�user, Jens ;Marx, G�nter

Publisher
Springer-Verlag
Year
1997
Weight
319 KB
Volume
125
Category
Article
ISSN
0344-838X

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## Abstract Micro‐Raman spectroscopy was applied to investigate the stress relaxation in the CVD growth of SiC on silicon substrates. We observed a double‐peak feature of the LO + 2TO silicon phonon in as‐grown SiC/Si samples, and tentatively ascribed it to phase transformation of silicon during th