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Phase transformation of Si upon epitaxial CVD growths of β-SiC layer on Si substrates

✍ Scribed by Zhu, W. L. ;Zhu, J. L. ;Wan, K. S. ;Nishino, S. ;Pezzotti, G.

Publisher
John Wiley and Sons
Year
2006
Tongue
English
Weight
174 KB
Volume
203
Category
Article
ISSN
0031-8965

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✦ Synopsis

Abstract

Micro‐Raman spectroscopy was applied to investigate the stress relaxation in the CVD growth of SiC on silicon substrates. We observed a double‐peak feature of the LO + 2TO silicon phonon in as‐grown SiC/Si samples, and tentatively ascribed it to phase transformation of silicon during the epitaxial growth. Stress analysis around the featured regions suggested that it might be related with incomplete relief of local stress, such as appearance of micropipes in suitable circumstances. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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