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Epitaxial growth of 3C-SiC films on Si substrates by triode plasma CVD using dimethylsilane

✍ Scribed by Kanji Yasui; Kunio Asada; Tadashi Akahane

Publisher
Elsevier Science
Year
2000
Tongue
English
Weight
231 KB
Volume
159-160
Category
Article
ISSN
0169-4332

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✦ Synopsis

The epitaxial growth of cubic-silicon carbide SiC on Si substrates was carried out by triode plasma CVD using Ε½ . dimethylsilane DMS as source gas. The lowering of electron temperature and the reduction of the rf fluctuation of plasma space potential in the afterglow plasma region were realized by applying negative grid bias and adding bypass condensers between cathode and grid electrode. The substrate temperature was rapidly raised from 5008C to the growth temperatures in the flow of hydrogen and DMS, followed by the epitaxial growth. By this growth procedure, the SiC films with good surface morphology were grown.

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Growth of crystalline SiC films by triod
Growth of crystalline SiC films by triode plasma CVD using an organosilicon compound
✍ Kanji Yasui; Masahide Kimura; Tadashi Akahane πŸ“‚ Article πŸ“… 1999 πŸ› John Wiley and Sons 🌐 English βš– 339 KB πŸ‘ 2 views

In this study, dimethylchlorosilane diluted by hydrogen is used as the raw material, and silicon carbide crystals are grown on a silicon substrate at low temperature (< 500 Β°C) by the triode plasma CVD method. The plasma parameters, such as the electron temperature and the space potential in the spa