Growth of crystalline SiC films by triode plasma CVD using an organosilicon compound

✍ Scribed by Kanji Yasui; Masahide Kimura; Tadashi Akahane

• Publisher: John Wiley and Sons
• Year: 1999
• Tongue: English
• Weight: 339 KB
• Volume: 82
• Category: Article
• ISSN: 8756-663X
• DOI: 10.1002/(sici)1520-6432(199902)82:2<55::aid-ecjb7>3.0.co;2-z

✦ Synopsis

In this study, dimethylchlorosilane diluted by hydrogen is used as the raw material, and silicon carbide crystals are grown on a silicon substrate at low temperature (< 500 °C) by the triode plasma CVD method. The plasma parameters, such as the electron temperature and the space potential in the spatial afterglow region, are measured by using a Langmuir probe with a high-frequency response. The characteristics depending on the grid bias are examined, and the relationship of those parameters to the crystallinity of the silicon carbide film is examined. When the grid bias is zero or negative, the electron temperature of the afterglow region is low (1 eV) and a silicon carbide film of crystalline structure is obtained. The inclusion of chlorine is smaller when the hydrogen dilution ratio is high. The excess carbon in the material is efficiently extracted, and a crystalline silicon carbide film with the chemically expected composition is obtained. The crystallinity of the fabricated film is best when the hydrogen dilution is high and the grid bias is set for the lowest plasma spatial potential.