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ChemInform Abstract: Epitaxial Growth of Cubic SiC Films on Si Substrates by High Vacuum Chemical Vapor Deposition Using 1,3-Disilabutane.

✍ Scribed by K.-W. LEE; K.-S. YU; J.-H. BOO; Y. KIM; T. HATAYAMA; T. KIMOTO; H. MATSUNAMI


Publisher
John Wiley and Sons
Year
2010
Weight
29 KB
Volume
28
Category
Article
ISSN
0931-7597

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