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X.P.S. analysis of the Si substrate surface pretreatment for diamond film deposition

✍ Scribed by Ascarelli, P.; Fontana, S.; Cossu, G.; Cappelli, E.; Nistico, N.


Book ID
122467534
Publisher
Elsevier Science
Year
1992
Tongue
English
Weight
304 KB
Volume
1
Category
Article
ISSN
0925-9635

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The low temperature (5 K) photoluminescence (PL) of silicon substrate in the range of 0.8-1.12 eV before and after microwave plasma assisted chemical vapor deposition of polycrystalline diamond films was studied. The diamond films were deposited onto the pure (r$3 kOhm cm) dislocation-free silicon t