Analysis of photoluminescence spectra for detection of stress-induced defects in silicon substrates after the polycrystalline diamond film deposition
✍ Scribed by Victor S. Bagaev; Denis F. Aminev; Tatiana I. Galkina; Andrey Yu. Klokov; Vladimir S. Krivobok; Victor G. Ralchenko
- Publisher
- Elsevier Science
- Year
- 2009
- Tongue
- English
- Weight
- 194 KB
- Volume
- 404
- Category
- Article
- ISSN
- 0921-4526
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✦ Synopsis
The low temperature (5 K) photoluminescence (PL) of silicon substrate in the range of 0.8-1.12 eV before and after microwave plasma assisted chemical vapor deposition of polycrystalline diamond films was studied. The diamond films were deposited onto the pure (r$3 kOhm cm) dislocation-free silicon treated by mechanical polishing (MP) or by superior chemical-mechanical polishing (CMP). In the PL spectra of coated silicon substrates treated by CMP, the D 1 and D 2 lines related to the dislocation emission were registered. We suppose that the formation of dislocations in the substrate is caused by a strong adhesion of diamond film and as a consequence by the formation of inner tensions released as dislocations.