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XPS analysis of AlN thin films deposited by plasma enhanced atomic layer deposition

✍ Scribed by Motamedi, P.; Cadien, K.

Book ID
125857192
Publisher
Elsevier Science
Year
2014
Tongue
English
Weight
649 KB
Volume
315
Category
Article
ISSN
0169-4332

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Structural properties of AlN films depos
Structural properties of AlN films deposited by plasma-enhanced atomic layer deposition at different growth temperatures
✍ Alevli, Mustafa ;Ozgit, Cagla ;Donmez, Inci ;Biyikli, Necmi πŸ“‚ Article πŸ“… 2011 πŸ› John Wiley and Sons 🌐 English βš– 748 KB

## Abstract Crystalline aluminum nitride (AlN) films have been prepared by plasma‐enhanced atomic layer deposition (PEALD) within the temperature range from 100 to 500 °C. A self‐limiting, constant growth rate per cycle temperature window (100–200 °C) was established which is the major characterist