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Plasma-Enhanced Atomic Layer Deposition of AlN Epitaxial Thin Film for AlN/GaN Heterostructure TFTs

✍ Scribed by Liu, Cheng; Liu, Shenghou; Huang, Sen; Chen, Kevin J.

Book ID
121346003
Publisher
IEEE
Year
2013
Tongue
English
Weight
580 KB
Volume
34
Category
Article
ISSN
0741-3106

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## Abstract Crystalline aluminum nitride (AlN) films have been prepared by plasma‐enhanced atomic layer deposition (PEALD) within the temperature range from 100 to 500 °C. A self‐limiting, constant growth rate per cycle temperature window (100–200 °C) was established which is the major characterist