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Structural and electrical properties of ternary Ru–AlN thin films prepared by plasma-enhanced atomic layer deposition

✍ Scribed by Yu-Ri Shin; Won-Sub Kwack; Yun Chang Park; Jin-Hyock Kim; Seung-Yong Shin; Kyoung Il Moon; Hyung-Woo Lee; Se-Hun Kwon

Book ID
113787539
Publisher
Elsevier Science
Year
2012
Tongue
English
Weight
602 KB
Volume
47
Category
Article
ISSN
0025-5408

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Structural properties of AlN films depos
Structural properties of AlN films deposited by plasma-enhanced atomic layer deposition at different growth temperatures
✍ Alevli, Mustafa ;Ozgit, Cagla ;Donmez, Inci ;Biyikli, Necmi 📂 Article 📅 2011 🏛 John Wiley and Sons 🌐 English ⚖ 748 KB

## Abstract Crystalline aluminum nitride (AlN) films have been prepared by plasma‐enhanced atomic layer deposition (PEALD) within the temperature range from 100 to 500 °C. A self‐limiting, constant growth rate per cycle temperature window (100–200 °C) was established which is the major characterist