𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Influence of laser treatment on the electrical properties of plasma-enhanced-atomic-layer-deposited TiO2thin films

✍ Scribed by Jeon-Ho Kim; Won-Jae Lee; Jin-Dong Kim; Soon-Gil Yoon

Publisher
TechnoPress
Year
2005
Tongue
English
Weight
477 KB
Volume
11
Category
Article
ISSN
1598-9623

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

The properties of Ru films deposited by
The properties of Ru films deposited by remote plasma atomic layer deposition on Ar plasma-treated SiO2
✍ Park, Taeyong ;Choi, Dongjin ;Choi, Hagyoung ;Jeon, Hyeongtag πŸ“‚ Article πŸ“… 2011 πŸ› John Wiley and Sons 🌐 English βš– 405 KB

## Abstract By using remote plasma atomic layer deposition (ALD), ruthenium thin films were deposited on SiO~2~ using bis(ethylcyclopentadienyl)ruthenium [Ru(EtCp)~2~] as a Ru precursor and an ammonia plasma as a reactant. Different plasma treatments were applied, and the best results were obtained

Structural properties of AlN films depos
Structural properties of AlN films deposited by plasma-enhanced atomic layer deposition at different growth temperatures
✍ Alevli, Mustafa ;Ozgit, Cagla ;Donmez, Inci ;Biyikli, Necmi πŸ“‚ Article πŸ“… 2011 πŸ› John Wiley and Sons 🌐 English βš– 748 KB

## Abstract Crystalline aluminum nitride (AlN) films have been prepared by plasma‐enhanced atomic layer deposition (PEALD) within the temperature range from 100 to 500 °C. A self‐limiting, constant growth rate per cycle temperature window (100–200 °C) was established which is the major characterist