Effect of nitrogen doping concentration on the properties of TiO2 films grown by atomic layer deposition
β Scribed by Hsyi-En Cheng; Yu-Ru Chen; Wen-Tuan Wu; Ching-Ming Hsu
- Publisher
- Elsevier Science
- Year
- 2011
- Tongue
- English
- Weight
- 579 KB
- Volume
- 176
- Category
- Article
- ISSN
- 0921-5107
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π SIMILAR VOLUMES
Sheet carrier concentration and Hall mobility of the N atomic layer doped Si epitaxial films on Si(1 0 0) were obtained by Hall effect measurement. It is found that the N atoms act as a donor. Donor activation ratio tends to decrease with increasing N amount, and the typical ratio is about 0.4% at t
We investigated the aluminum distribution in aluminum-doped zinc oxide films grown by atomic layer deposition. Surface morphology, structure, composition and electrical properties of obtained films were studied. For the aluminum content less than 2 at.%, a periodicity of Al distribution along the la
Atomic layer deposition of Cr 2 O 3 thin films from CrO 2 Cl 2 and CH 3 OH on amorphous SiO 2 and crystalline Si(1 0 0) and a-Al 2 O 3 (1 1 0 2) substrates was investigated, and properties of the films were ascertained. Self-limited growth with a rate of 0.05-0.1 nm/cycle was obtained at substrate t