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The uniformity of Al distribution in aluminum-doped zinc oxide films grown by atomic layer deposition

✍ Scribed by G. Luka; L. Wachnicki; B.S. Witkowski; T.A. Krajewski; R. Jakiela; E. Guziewicz; M. Godlewski

Publisher
Elsevier Science
Year
2011
Tongue
English
Weight
929 KB
Volume
176
Category
Article
ISSN
0921-5107

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✦ Synopsis

We investigated the aluminum distribution in aluminum-doped zinc oxide films grown by atomic layer deposition. Surface morphology, structure, composition and electrical properties of obtained films were studied. For the aluminum content less than 2 at.%, a periodicity of Al distribution along the layer depth was observed. This periodicity diminished significantly after annealing the samples in nitrogen atmosphere at 300 β€’ C.

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Innovative films ZnO: Al-xSc (in which x = 0, 0.4, 0.8 and 1.7 wt.%) were prepared through RF-sputtering on the ZnO target and DC-sputtering on the Al-xSc alloy targets. X-ray diffraction (XRD) of the films displayed a hexagonal wurtzite textured at (002) and the peak (002) shifted to a little highe