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Physical/chemical properties of tin oxide thin film transistors prepared using plasma-enhanced atomic layer deposition

✍ Scribed by Byung Kook Lee; Eunae Jung; Seok Hwan Kim; Dae Chul Moon; Sun Sook Lee; Bo Keun Park; Jin Ha Hwang; Taek-Mo Chung; Chang Gyoun Kim; Ki-Seok An


Book ID
119322486
Publisher
Elsevier Science
Year
2012
Tongue
English
Weight
816 KB
Volume
47
Category
Article
ISSN
0025-5408

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