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Structural, electrical, and optical properties of transparent gallium oxide thin films grown by plasma-enhanced atomic layer deposition

✍ Scribed by Shan, F. K.; Liu, G. X.; Lee, W. J.; Lee, G. H.; Kim, I. S.; Shin, B. C.

Book ID
111975614
Publisher
American Institute of Physics
Year
2005
Tongue
English
Weight
800 KB
Volume
98
Category
Article
ISSN
0021-8979

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## Abstract Atomic layer deposition (ALD) was used to fabricate transparent and conductive thin films of ZnO. Two hundred‐nano metre thick ZnO films were deposited on glass substrates at low growth temperatures varied between 120 and 240 °C. As zinc and oxygen precursors we used diethylzinc (DEZn)