Structural, electrical and optical properties of Si doped ZnO films grown by atomic layer deposition
โ Scribed by Hai Yuan
- Book ID
- 118801606
- Publisher
- Springer US
- Year
- 2012
- Tongue
- English
- Weight
- 530 KB
- Volume
- 23
- Category
- Article
- ISSN
- 0957-4522
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๐ SIMILAR VOLUMES
Transparent conductive dysprosium doped ZnO (Dy:ZnO) thin films with preferential orientation in the (0 0 0 2) direction were deposited on (0 0 0 1) sapphire substrate by buffer assisted pulsed laser deposition. The experimental results show that the resistivity of Dy:ZnO thin films decreased to a m
Sheet carrier concentration and Hall mobility of the N atomic layer doped Si epitaxial films on Si(1 0 0) were obtained by Hall effect measurement. It is found that the N atoms act as a donor. Donor activation ratio tends to decrease with increasing N amount, and the typical ratio is about 0.4% at t