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X-ray, XTEM and RBS analysis of recrystallized ion beam amorphized CVD Si

✍ Scribed by John F. Knudsen; Paul M. Adams; Denise L. Leung; Robert C. Cole; Donald C. Mayer

Book ID
113281999
Publisher
Elsevier Science
Year
1991
Tongue
English
Weight
564 KB
Volume
59-60
Category
Article
ISSN
0168-583X

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## Abstract An X‐ray Si __L__~2,3~‐emission spectroscopy study of a SiO~2~/n‐Si heterostructure containing a thin oxide layer of __d__ = 20 nm thickness implanted by Si^+^ ions with an energy 12 keV is reported. The maximum concentration of implanted Si^+^ ions is located close to the SiO~2~–Si int