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Soft X-ray emission spectroscopy of low-dimensional SiO2/Si interfaces after Si+ion implantation and ion beam mixing

✍ Scribed by Zatsepin, D. A. ;Kaschieva, S. ;Zier, M. ;Schmidt, B. ;Fitting, H.-J.

Publisher
John Wiley and Sons
Year
2010
Tongue
English
Weight
380 KB
Volume
207
Category
Article
ISSN
0031-8965

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✦ Synopsis

Abstract

An X‐ray Si L~2,3~‐emission spectroscopy study of a SiO~2~/n‐Si heterostructure containing a thin oxide layer of d = 20 nm thickness implanted by Si^+^ ions with an energy 12 keV is reported. The maximum concentration of implanted Si^+^ ions is located close to the SiO~2~–Si interface at a depth of 18 nm leading to an ion‐beam mixed SiO~2~/Si interface layer in this region, consisting of a non‐stoichiometric SiO~x~ matrix. The possible mechanisms of these processes are discussed by atomic collision cascades (knocking‐off and knocking‐on processes) during ion implantation, associated by partial phase separation into silicon precipitates and SiO~2~.

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✍ Zatsepin, D. A. ;Mack, P. ;Wright, A. E. ;Schmidt, B. ;Fitting, H.-J. 📂 Article 📅 2011 🏛 John Wiley and Sons 🌐 English ⚖ 344 KB

## Abstract A X‐ray photoelectron spectroscopy (XPS) of valence band (VB) and core levels are performed for a SiO~2~/p‐Si heterostructure containing a thin oxide layer of __d__= 20 nm thickness and implanted by Si^+^ ions. With an implantation energy of 12 keV the maximum density of the implanted S