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XPS analysis and valence band structure of a low-dimensional SiO2/Si system after Si+ ion implantation

✍ Scribed by Zatsepin, D. A. ;Mack, P. ;Wright, A. E. ;Schmidt, B. ;Fitting, H.-J.

Publisher
John Wiley and Sons
Year
2011
Tongue
English
Weight
344 KB
Volume
208
Category
Article
ISSN
0031-8965

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✦ Synopsis

Abstract

A X‐ray photoelectron spectroscopy (XPS) of valence band (VB) and core levels are performed for a SiO~2~/p‐Si heterostructure containing a thin oxide layer of d= 20 nm thickness and implanted by Si^+^ ions. With an implantation energy of 12 keV the maximum density of the implanted Si^+^ profile is located close to the SiO~2~–Si interface at a depth of 18 nm, but a piling‐up of Si is also found immediately beneath the surface up to 2 nm, i.e., within the escape depth of XPS electrons. Thus we may expect a partial phase separation associated with Si aggregation and nanocluster formation imbedded in a non‐stoichiometric SiO~x~ matrix. By means of XPS and in comparison to X‐ray emission spectroscopy (XES) the related changes of the VB structure are investigated.

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Soft X-ray emission spectroscopy of low-
Soft X-ray emission spectroscopy of low-dimensional SiO2/Si interfaces after Si+ion implantation and ion beam mixing
✍ Zatsepin, D. A. ;Kaschieva, S. ;Zier, M. ;Schmidt, B. ;Fitting, H.-J. 📂 Article 📅 2010 🏛 John Wiley and Sons 🌐 English ⚖ 380 KB

## Abstract An X‐ray Si __L__~2,3~‐emission spectroscopy study of a SiO~2~/n‐Si heterostructure containing a thin oxide layer of __d__ = 20 nm thickness implanted by Si^+^ ions with an energy 12 keV is reported. The maximum concentration of implanted Si^+^ ions is located close to the SiO~2~–Si int