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Ion beam induced amorphization and recrystallization of Si/SiC/Si layer systems

✍ Scribed by K. Volz; J.K.N. Lindner; B. Stritzker


Book ID
114168409
Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
570 KB
Volume
120
Category
Article
ISSN
0168-583X

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This paper focuses on the role of electronic energy loss in ion beam induced epitaxial crystallization for which swift heavy ions (100 MeV Ag 7+ ) have been used. We observed good epitaxial crystallization at 473-623 K, which is a much lower temperature regime as compared to the one needed for conve