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Swift heavy ion beam induced recrystallization of amorphous Si layers

✍ Scribed by P.K. Sahoo; T. Som; D. Kanjilal; V.N. Kulkarni

Publisher: Elsevier Science
Year: 2005
Tongue: English
Weight: 255 KB
Volume: 240
Category: Article
ISSN: 0168-583X
DOI: 10.1016/j.nimb.2005.06.123

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✦ Synopsis

This paper focuses on the role of electronic energy loss in ion beam induced epitaxial crystallization for which swift heavy ions (100 MeV Ag 7+ ) have been used. We observed good epitaxial crystallization at 473-623 K, which is a much lower temperature regime as compared to the one needed for conventional solid phase epitaxial growth. A systematic planar recrystallization has been observed as a function of temperature giving rise to an activation energy of 0.25 ± 0.02 eV. A possible mechanism of recrystallization is discussed on the basis of the production of vacancies along the track of the swift heavy ion and their migration at elevated temperatures.

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