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Ion beam synthesis of Si3N4 amorphous buried layers

✍ Scribed by A.I. Belogorokhov; A.B. Danilin; V.N. Mordkovich; O.I. Vyletalina

Publisher
Elsevier Science
Year
1992
Tongue
English
Weight
117 KB
Volume
12
Category
Article
ISSN
0921-5107

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✦ Synopsis

It was demonstrated that it is possible to prevent the crystallization of buried Si3N 4 layers formed by N Γ· implantation with E--150 keV, β€’ ---5.0 Γ— 1017 N+cm 2 and TA = 1200 Β°C (2 h). To achieve this, preliminary implantation with E = 150 keV and β€’/> 5.0 x 1016 O + cm 2 has to be carried out. Radiation defects induced during O Γ· implantation stimulate the process of crystallization.

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This paper focuses on the role of electronic energy loss in ion beam induced epitaxial crystallization for which swift heavy ions (100 MeV Ag 7+ ) have been used. We observed good epitaxial crystallization at 473-623 K, which is a much lower temperature regime as compared to the one needed for conve