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Epitaxial recrystallization of amorphous Si layers by swift heavy ions

✍ Scribed by P.K. Sahoo; T. Mohanty; D. Kanjilal; A. Pradhan; V.N. Kulkarni

Publisher
Elsevier Science
Year
2007
Tongue
English
Weight
175 KB
Volume
257
Category
Article
ISSN
0168-583X

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πŸ“œ SIMILAR VOLUMES

Swift heavy ion beam induced recrystalli
Swift heavy ion beam induced recrystallization of amorphous Si layers
✍ P.K. Sahoo; T. Som; D. Kanjilal; V.N. Kulkarni πŸ“‚ Article πŸ“… 2005 πŸ› Elsevier Science 🌐 English βš– 255 KB

This paper focuses on the role of electronic energy loss in ion beam induced epitaxial crystallization for which swift heavy ions (100 MeV Ag 7+ ) have been used. We observed good epitaxial crystallization at 473-623 K, which is a much lower temperature regime as compared to the one needed for conve