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Ion-cut of Si facilitated by interfacial defects of Si substrate/epitaxial layer grown by molecular-beam epitaxy

✍ Scribed by Lin Shao; J.K. Lee; T. Höchbauer; M. Nastasi; Phillip E. Thompson; I. Rusakova; H.W. Seo; Q.Y. Chen; J.R. Liu; Wei-Kan Chu

No coin nor oath required. For personal study only.

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