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Electronic properties of multiple Si δ-doped GaAs layers grown by molecular beam epitaxy and migration-enhanced epitaxy

✍ Scribed by S.M. Shibili; A.B. Henriques; C.A.C. Mendonça; E.C.F. da Silva; E.A. Meneses; L.M.R. Scolfaro; J.R. Leite

No coin nor oath required. For personal study only.

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