## Abstract Using the modified method of limited Xβray topographs the distribution of defects along the silicon dendritic thickness was investigated. It is found that there are two dislocation sources in the given crystals, one of which acts near the surface and generates the loopβshaped dislocatio
X-Ray Topographic Investigation of Dendritic Silicon Crystals
β Scribed by Dr. M. Ya. Dashevsky; V. A. Isaakjan; M. A. Khatsernov
- Publisher
- John Wiley and Sons
- Year
- 1972
- Tongue
- English
- Weight
- 379 KB
- Volume
- 7
- Category
- Article
- ISSN
- 0232-1300
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β¦ Synopsis
and Alloys
X-Ray Topographic Investigation of Dendritic Silicon Crystals
Using Lang and double-crystal X-ray topographic methods the dislocation structure of dendritic silicon crystals have becn investigated. I t is shown that t,he surface layers of these crystals have a more perfect structure than their bulk volume. The t w i n lamella is a dislocation-frec formation and there are dislocation-frec zones -1,5 mm in width in the volume of crystals.
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