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The X-ray topographic investigation of defect distribution in dendritic silicon crystals along their cross section

✍ Scribed by Dr. M. Ya. Dashevsky; V. A. Isaakyan; M. A. Khatsernov


Publisher
John Wiley and Sons
Year
1973
Tongue
English
Weight
201 KB
Volume
8
Category
Article
ISSN
0232-1300

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✦ Synopsis


Abstract

Using the modified method of limited X‐ray topographs the distribution of defects along the silicon dendritic thickness was investigated. It is found that there are two dislocation sources in the given crystals, one of which acts near the surface and generates the loop‐shaped dislocations in the centre of the sample. The other source located in the interior parts of the crystal creates the edge defect pilings.