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X-Ray Topographic Investigation of Silicon Single Crystals Heavily Doped with Sb

✍ Scribed by Prof. Dr. sc. S. S. Gorelik; Dr. V. T. Bublik; M. A. Khatsernov; Dr. I. N. Voronov; Dr. H. I. Makeev; Ing. I. S. Malvinova

Publisher: John Wiley and Sons
Year: 1972
Tongue: English
Weight: 620 KB
Volume: 7
Category: Article
ISSN: 0232-1300
DOI: 10.1002/crat.19720071206

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✦ Synopsis

Moscow Institnte oe Steel iind Alloys State research and project Institute of tho r&m-nirtale Industry Podolsk chemical and metalliirgical works

X-Ray Topographic Investigation of Silicon Single Crystals Heavily Doped with Sb

Heavily Sb dopcd silicon crystals grown by Czochralski mcthod were investigated using X-rays methods. It is shown that growth striation contrast is caused by inhornogencous Sb distribution. While approaching the lower part of crystals their volume is being contaminated by dispersive particles of noncontrolled impurities that results in decrease of anomalously transmitted X-rays and weakening of the contrast in topographical growth striation image. In the canal connected with the facet effect crystal structure is less damagcd by foreign inclusions.

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