Moscow Institnte oe Steel iind Alloys State research and project Institute of tho r&m-nirtale Industry Podolsk chemical and metalliirgical works ## X-Ray Topographic Investigation of Silicon Single Crystals Heavily Doped with Sb Heavily Sb dopcd silicon crystals grown by Czochralski mcthod were i
β¦ LIBER β¦
Investigation of shallow strain distributions in silicon single crystals with X-ray bragg reflection
β Scribed by Dr. P. Zaumseil; Dipl.-Phys. U. Winter
- Publisher
- John Wiley and Sons
- Year
- 1983
- Tongue
- English
- Weight
- 448 KB
- Volume
- 18
- Category
- Article
- ISSN
- 0232-1300
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
X-Ray Topographic Investigation of Silic
β
Prof. Dr. sc. S. S. Gorelik; Dr. V. T. Bublik; M. A. Khatsernov; Dr. I. N. Voron
π
Article
π
1972
π
John Wiley and Sons
π
English
β 620 KB
The X-ray topographic investigation of d
β
Dr. M. Ya. Dashevsky; V. A. Isaakyan; M. A. Khatsernov
π
Article
π
1973
π
John Wiley and Sons
π
English
β 201 KB
π 2 views
## Abstract Using the modified method of limited Xβray topographs the distribution of defects along the silicon dendritic thickness was investigated. It is found that there are two dislocation sources in the given crystals, one of which acts near the surface and generates the loopβshaped dislocatio