The X-ray topographic investigation of d
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Dr. M. Ya. Dashevsky; V. A. Isaakyan; M. A. Khatsernov
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Article
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1973
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John Wiley and Sons
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English
β 201 KB
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## Abstract Using the modified method of limited Xβray topographs the distribution of defects along the silicon dendritic thickness was investigated. It is found that there are two dislocation sources in the given crystals, one of which acts near the surface and generates the loopβshaped dislocatio