Wurtzite GaN-based heterostructures by molecular beam epitaxy
β Scribed by Morkoc, H.
- Book ID
- 117866181
- Publisher
- IEEE
- Year
- 1998
- Tongue
- English
- Weight
- 239 KB
- Volume
- 4
- Category
- Article
- ISSN
- 1077-260X
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π SIMILAR VOLUMES
## Abstract The strain distribution and defects in a graded AlN/GaN heterostructure comprising AlN layers from 3 nm up to 100 nm grown by plasmaβassisted MBE were studied using transmission electron microscopy techniques. Gradual strain relaxation was observed as well as strain partitioning between
The structural properties as well as epitaxial growth peculiarities of thin film silicon-based heterostructures (SBH) are described with emphasis put on MBE growth of these structures. More detailed considerations are presented for the strained-layer Si 1-x Ge x /Si heterostructures. The 4.17% latti