𝔖 Bobbio Scriptorium
✦   LIBER   ✦

GaN based III–V nitrides by molecular beam epitaxy

✍ Scribed by H. Morkoç; A. Botchkarev; A. Salvador; B. Sverdlov


Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
435 KB
Volume
150
Category
Article
ISSN
0022-0248

No coin nor oath required. For personal study only.


📜 SIMILAR VOLUMES


Growth of GaN on SiC(0001) by Molecular
✍ Lee, C.D. ;Sagar, Ashutosh ;Feenstra, R.M. ;Sarney, W.L. ;Salamanca-Riba, L. ;Hs 📂 Article 📅 2001 🏛 John Wiley and Sons 🌐 English ⚖ 188 KB 👁 1 views

GaN films are grown by plasma-assisted molecular beam epitaxy on 6H-SiC(0001) substrates. Suitable substrate preparation and growth conditions are found which greatly improve the structural quality of the films. Threading dislocation densities of about 1 Â 10 9 cm --2 for edge dislocations and 1 Â 1