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Auger investigation of group III nitride films grown by molecular beam epitaxy

✍ Scribed by S.V. Novikov; C.T. Foxon; T.S. Cheng; T.L. Tansley; J.W. Orton; D.E. Lacklison; D. Johnston; N. Baba-Ali; S.E. Hooper; L.C. Jenkins; L. Eaves

Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
290 KB
Volume
146
Category
Article
ISSN
0022-0248

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The photoreflectance (PR) lineshape of GaN films grown by molecular beam epitaxy was investigated in the temperature range of 10 to 400 K. At low temperatures, the lineshape is dominated by excitonic transitions and can be reasonably well fitted using the first derivative of a Gaussianbroadened osci