Preparation of wurtzite GaN-based magnetic alloy semiconductors by molecular beam epitaxy
β Scribed by S Kuwabara; K Ishii; S Haneda; T Kondo; H Munekata
- Publisher
- Elsevier Science
- Year
- 2001
- Tongue
- English
- Weight
- 181 KB
- Volume
- 10
- Category
- Article
- ISSN
- 1386-9477
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InGaGdN single-layer and InGaGdN/GaN superlattice (SL) structures were grown on the MOVPE-grown GaN (0 0 0 1) template substrates by radio frequency molecular beam epitaxy. X-ray diffraction spectroscopy and X-ray absorption fine structure data showed no existence of a secondary phase such as GdN or
GaN was grown by low angle incidence microchannel epitaxy (LAIMCE) using NH 3 -based metal-organic molecular beam epitaxy (NH 3 -based MOMBE). The growth mechanism was studied by varying the growth temperature and time. The effect of the incidence direction of precursors on lateral growth was also i