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Temperature dependence of selective growth of GaN by ammonia-based metal-organic molecular beam epitaxy

✍ Scribed by Chia-Hung Lin; Ryota Abe; Takahiro Maruyama; Shigeya Naritsuka

Publisher
Elsevier Science
Year
2011
Tongue
English
Weight
672 KB
Volume
318
Category
Article
ISSN
0022-0248

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GaN was grown by low angle incidence microchannel epitaxy (LAIMCE) using NH 3 -based metal-organic molecular beam epitaxy (NH 3 -based MOMBE). The growth mechanism was studied by varying the growth temperature and time. The effect of the incidence direction of precursors on lateral growth was also i

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