✦ LIBER ✦

Characterizations of InxAlyGa1−x−yN alloy systems grown on GaN substrates by molecular-beam epitaxy

✍ Scribed by S. Iwata; S. Kubo; M. Konishi; T. Saimei; S. Kurai; T. Taguchi; K. Kainosho; A. Yokohata

Publisher: Elsevier Science
Year: 2003
Tongue: English
Weight: 193 KB
Volume: 6
Category: Article
ISSN: 1369-8001
DOI: 10.1016/j.mssp.2003.08.010

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Characterization of AlxInyGa1−x−yN quate

Characterization of AlxInyGa1−x−yN quaternary alloys grown on sapphire substrates by molecular-beam epitaxy

✍ M.A. Abid; H. Abu Hassan; Z. Hassan; S.S. Ng; S.K. Mohd Bakhori; N.H.Abd. Raof 📂 Article 📅 2011 🏛 Elsevier Science 🌐 English ⚖ 761 KB

High-resolution X-ray diffraction (HR-XRD) with rocking curve, atomic force microscopy (AFM) and photoluminescence (PL) spectroscopy have been performed on highquality quaternary Al x In y Ga 1 À x À y N thin films at room temperature. The Al x In y Ga 1 À x À y N films were grown on c-plane (0 0 0

Characterization of N-doped MgZnSSe comp

Characterization of N-doped MgZnSSe compound system grown on intentionally misoriented GaAs substrates by molecular beam epitaxy

✍ Yoshikatsu Ichimura; Katsumi Kishino; Mitsunari Satake; Masaru Kuramoto; Atsushi 📂 Article 📅 1995 🏛 Elsevier Science 🌐 English ⚖ 391 KB

Optical properties of doped GaN grown by

Optical properties of doped GaN grown by a modified molecular beam epitaxial (MBE) process on GaAs substrates

✍ T.S. Cheng; S.E. Hooper; L.C. Jenkins; C.T. Foxon; D.E. Lacklison; J.D. Dewsnip; 📂 Article 📅 1996 🏛 Elsevier Science 🌐 English ⚖ 281 KB

Structural characterization of Cd1−xZnxT

Structural characterization of Cd1−xZnxTe(001) layers grown by molecular beam epitaxy on Cd0.96Zn0.04Te substrates

✍ U. Rössner; J. Laugier; N. Magnea 📂 Article 📅 1994 🏛 Elsevier Science 🌐 English ⚖ 590 KB

Growth of AlxGa1—xN and Mg-Doped GaN Epi

Growth of AlxGa1—xN and Mg-Doped GaN Epilayers on Ga- and N-Faces of Bulk GaN Single Crystal Substrates by Molecular-Beam Epitaxy

✍ M. Konishi; T. Tanabe; S. Kubo; S. Kurai; T. Taguchi; K. Kainosho; A. Yokohata 📂 Article 📅 2002 🏛 John Wiley and Sons 🌐 English ⚖ 221 KB 👁 2 views

a), T. Tanabe (a), S. Kubo (a), S. Kurai (a), T. Taguchi (a), K. Kainosho (b), and A. Yokohata (b)

Growth by molecular beam epitaxy of thic

Growth by molecular beam epitaxy of thick films of InxGa1−xAs (x ≈ 0.53) on Si(100) substrates

✍ D.I. Westwood; D.A. Woolf; S.A. Clark; R.H. Williams 📂 Article 📅 1991 🏛 Elsevier Science 🌐 English ⚖ 364 KB

Thick films of InxGa~\_xAs (x = 0.53 +\_0.04) have been grown on misoriented silicon substrates by molecular beam epitaxy as a function of substrate temperature and layer thickness. For films of 3 pm thickness, grown in the temperature range Tg = 200 to 550°C, the films became increasingly rough as