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Optical properties of doped GaN grown by a modified molecular beam epitaxial (MBE) process on GaAs substrates

✍ Scribed by T.S. Cheng; S.E. Hooper; L.C. Jenkins; C.T. Foxon; D.E. Lacklison; J.D. Dewsnip; J.W. Orton

No coin nor oath required. For personal study only.

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